dmg6601lvt document number: ds35405 rev. 4 - 2 1 of 9 www.diodes.com august 2013 ? diodes incorporated dmg6601lvt advance informtion complementary pair enh ancement mode mosfet product summary device v (br)dss r ds(on) max package i d max t a = +25c q1 30v 55m ? @ v gs = 10v tsot26 3.8a 65m ? @ v gs = 4.5v tsot26 3.6a q2 -30v 110m ? @ v gs = -10v tsot26 -2.5a 142m ? @ v gs = -4.5v tsot26 -2.1a description this mosfet has been designed to minimize the on-state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal for high efficiency po wer management applications. applications ? backlighting ? power management functions ? dc-dc converters features ? complementary mosfet ? low on-resistance ? low input capacitance ? fast switching speed ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? qualified to aec-q101 standards for high reliability mechanical data ? case: tsot26 ? case material: molded plastic, "green" molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminal connections indicator: see diagram ? terminals: finish ? nipdau over copper leadframe. solderable per mil-std-202, method 208 ? weight: 0.008 grams (approximate) ordering information (note 4) part number case packaging DMG6601LVT-7 tsot26 3k/tape & reel notes: 1. no purposely added lead. fully eu directiv e 2002/95/ec (rohs) & 2011/6 5/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more in formation about diodes incorporated?s definitions of halogen- a nd antimony-free, "green" and lead-free. 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at http://www.diodes.com/p roducts/packages.html marking information date code key year 2011 2012 2013 2014 2015 2016 2017 code y z a b c d e month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d 66g = product type marking code ym = date code marking y = year (ex: x = 2010) m = month (ex: 9 = september) e4 s1 g1 d1 q1 s2 g2 d2 q2 n-channel p-channel device schematic 66g ym tsot26 top view top view 1 2 3 6 5 4 d1 s1 d2 g1 s2 g2
dmg6601lvt document number: ds35405 rev. 4 - 2 2 of 9 www.diodes.com august 2013 ? diodes incorporated dmg6601lvt advance informtion maximum ratings - q1 and q2 (@t a = +25c, unless otherwise specified.) characteristic symbol q1 q2 units drain-source voltage v dss 30 -30 v gate-source voltage v gss 12 12 v continuous drain current (note 6) v gs = 10v steady state t a = +25c t a = +70c i d 3.8 3.0 -2.5 -2 a t<10s t a = +25c t a = +70c i d 4.5 3.4 -3 -2.3 a maximum body diode forward current (note 6) i s 1.5 -1.5 a pulsed drain current (note 6) i dm 20 -15 a thermal characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol value units total power dissipation (note 5) t a = +25c p d 0.85 w t a = +70c 0.54 thermal resistance, junction to ambient (note 5) steady state r ? ja 147 c/w t<10s 103 total power dissipation (note 6) t a = +25c p d 1.3 w t a = +70c 0.83 thermal resistance, junction to ambient (note 6) steady state r ? ja 96 c/w t<10s 67 thermal resistance, junction to case (note 6) r ? electrical characteristics - q1 (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 7) drain-source breakdown voltage bv dss 30 - - v v gs = 0v, i d = 250 a zero gate voltage drain current @t j = +25c i dss - - 1 a v ds = 30v, v gs = 0v gate-source leakage i gss - - 100 na v gs = 12v, v ds = 0v on characteristics (note 7) gate threshold voltage v gs ( th ) 0.5 1 1.5 v v ds = v gs , i d = 250 a static drain-source on-resistance r ds (on) - 34 55 m ? v gs = 10v, i d = 3.4a - 38 65 v gs = 4.5v, i d = 3a 49 85 v gs = 2.5v, i d = 2a forward transfer admittance |y fs | - 6 - s v ds = 5v, i d = 3.4a diode forward voltage (note 7) v sd - 0.75 1.0 v v gs = 0v, i s = 1a dynamic characteristics (note 8) input capacitance c iss - 422 - pf v ds = 15v, v gs = 0v, f = 1.0mhz output capacitance c oss - 41 - pf reverse transfer capacitance c rss - 39 - pf gate resistance r g 1.26 - ? v ds = 0v, v gs = 0v, f = 1.0mhz total gate charge (v gs = 4.5v) q g - 5.4 - nc v gs = 10v, v ds = 15v, i d = 3.1a total gate charge (v gs = 10v) q g 12.3 - nc gate-source charge q g s - 0.8 - nc gate-drain charge q g d - 1.2 - nc turn-on delay time t d ( on ) - 1.6 - ns v ds = 15v, v gs = 10v, r l = 4.7 ? , r g =3 ? , turn-on rise time t r - 7.4 - ns turn-off delay time t d ( off ) - 31.2 - ns turn-off fall time t f - 15.6 - ns notes: 5. device mounted on fr-4 substrate pc board, 2oz copper, with minimum recommended pad layout 6. device mounted on fr-4 substrate pc board, 2oz copper, wi th thermal vias to bottom layer 1inch square copper plate 7. short duration pulse test used to minimize self-heating effect. 8. guaranteed by design. not subject to product testing.
dmg6601lvt document number: ds35405 rev. 4 - 2 3 of 9 www.diodes.com august 2013 ? diodes incorporated dmg6601lvt advance informtion electrical characteristics - q2 (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 7) drain-source breakdown voltage bv dss -30 - - v v gs = 0v, i d = -250 a zero gate voltage drain current @t j = +25c i dss - - -1 a v ds = -30v, v gs = 0v gate-source leakage i gss - - 100 na v gs = 12v, v ds = 0v on characteristics (note 7) gate threshold voltage v gs ( th ) -0.4 -0.8 -1.2 v v ds = v gs , i d = -250 a static drain-source on-resistance r ds (on) - 70 110 m ? v gs = -10v, i d = -2.3a - 81 142 v gs = -4.5v, i d = -2a 105 190 v gs = -2.5v, i d = -1a forward transfer admittance |y fs | - 5.3 - s v ds = -5v, i d = -2.3a diode forward voltage (note 7) v sd - -0.8 -1.0 v v gs = 0v, i s = -1a dynamic characteristics (note 8) input capacitance c iss - 541 - pf v ds = -15v, v gs = 0v, f = 1.0mhz output capacitance c oss - 46 - pf reverse transfer capacitance c rss - 43 - pf gate resistance r g - 16.9 - ? v ds = 0v, v gs = 0v, f = 1.0mhz total gate charge (v gs = -4.5v) q g - 6.5 - nc v gs = -10v, v ds = -15v, i d = -2.3a total gate charge (v gs = -10v) q g 13.8 - nc gate-source charge q g s - 1.0 - nc gate-drain charge q g d - 1.6 - nc turn-on delay time t d ( on ) - 1.7 - ns v ds = -15v, v gs = -10v, r l = 6 ? , r g = 3 ? , turn-on rise time t r - 4.6 - ns turn-off delay time t d ( off ) - 18.3 - ns turn-off fall time t f - 2.2 - ns notes: 7. short duration pulse test used to minimize self-heating effect. 8. guaranteed by design. not subject to product testing. n channel - q1 12 16 20 0 0.5 1.0 1.5 2.0 0 4 8 v , drain-source voltage (v) fig. 1 typical output characteristic ds i, d r ai n c u r r e n t (a) d v= 2.5v gs v= 3.0v gs v= 3.5v gs v= 4.0v gs v= 4.5v gs v= 5.0v gs v= 10v gs v= 2.0v gs 0 5 10 15 20 01 2 34 v , gate-source voltage (v) gs fig. 2 typical transfer characteristics i, d r ain c u r r ent (a) d t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a v = 5.0v ds
dmg6601lvt document number: ds35405 rev. 4 - 2 4 of 9 www.diodes.com august 2013 ? diodes incorporated dmg6601lvt advance informtion 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0 0 5 10 15 20 i , drain-source current (a) d fig. 3 typical on-resistance vs. drain current and gate voltage r , d r ain-s o u r ce o n- r esistance ( ) ds(on) ? v = 2.5v gs v = 10v gs v = 4.5v gs 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 2345 6 78910 0 v , gate-source voltage (v) gs fig. 4 typical drain-source on-resistance vs. gate-source voltage r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) ? i= 2a d 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0 2 4 6 8 101214161820 0.10 0 i , drain current (a) d fig. 5 typical on-resistance vs. drain current and temperature r , drain-s o urce o n-resistance ( ) ds(on) ? t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 4.5v gs 0.6 0.8 1.2 1.4 1.6 1.8 1.0 -50-25 0 255075100125150 t , junction temperature ( c) fig. 6 on-resistance variation with temperature j ? r , d r ai n -s o u r c e on-resistance (normalized) ds(on) v = 4.5v i= 5a gs d v=v i = 10a gs d 10 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.10 0 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) fig. 7 on-resistance variation with temperature j ? r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) ? v= v i= 5a gs d 4.5 v=v i= 10a gs d 10 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.0 0 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) fig. 8 gate threshold variation vs. ambient temperature j ? v, g ate t h r es h o ld v o lta g e (v) gs(th) i= 1ma d i = 250a d
dmg6601lvt document number: ds35405 rev. 4 - 2 5 of 9 www.diodes.com august 2013 ? diodes incorporated dmg6601lvt advance informtion 0 2 4 6 8 10 12 14 16 18 20 0 0.3 0.6 0.9 1.2 1.5 v , source-drain voltage (v) sd fig. 9 diode forward voltage vs. current i, s o u r c e c u r r ent (a) s t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a 1,000 100 10 c , j u n c t i o n c a p a c i t an c e (p f ) t 0 5 10 15 20 25 30 v , drain-source voltage (v) ds fig. 10 typical junction capacitance c iss c oss c rss f = 1mhz 02 468101214 0 2 4 6 8 10 v g a t e t h r es h o ld v o l t a g e (v) gs q(nc) g , total gate charge fig. 11 gate charge v= 15v i= a ds d 3.1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, pulse duration time (sec) fig. 12 transient thermal resistance 0.001 0.01 0.1 1 r(t), t r ansien t t h e r mal r esis t an c e r (t) = r(t) * r r = 143c/w duty cycle, d = t1/ t2 ?? ? ja ja ja d = 0.5 d = 0.7 d = 0.9 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse
dmg6601lvt document number: ds35405 rev. 4 - 2 6 of 9 www.diodes.com august 2013 ? diodes incorporated dmg6601lvt advance informtion p channel - q2 0 2 4 6 8 0 0.5 1.0 1.5 2.0 10 -v , drain -source voltage (v) fig. 13 typical output characteristics ds -i , d r ai n c u r r e n t (a) d v= -3.0v gs v= -3.5v gs v= -4.0v gs v= -4.5v gs v= -10v gs v= -5.0v gs v= -2.5v gs v= -2.0v gs 0 2 4 6 8 01 2 34 10 -v , gate-source voltage (v) gs fig. 14 typical transfer characteristics -i , d r ai n c u r r e n t (a) d t = 150c a ? t = 125c a ? t = 85c a ? t = 25c a ? t = -55c a ? v = -5.0v ds 0.02 0.04 0.06 0.08 0.12 0.14 0.16 0.18 02 46 810 0.10 0.20 0 r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) ? -i , drain source current (a) fig. 15 typical on-resistance vs. drain current and gate voltage d v = -4.5v gs v = -10v gs v = -2.5v gs 0.04 0.08 0.12 0.16 2345678910 0 -v , gate-source voltage (v) gs fig. 16 typical drain-source on-resistance vs. gate-source voltage r , d r ai n -s o u r c e o n - r esis t a n c e ( ) ds(on) ? i= -2a d 0.04 0.08 0.12 0.16 02 4 6 810 0.20 0 -i , drain source current (a) fig. 17 typical on-resistance vs. drain current and temperature d r , drain-s o urce o n-resistance ( ) ds(on) ? t = -55c a ? t = 25c a ? t = 85c a ? t = 125c a ? t = 150c a ? v= -4.5v gs 0.6 0.8 1.2 1.4 1.8 1.0 r , d r ai n -s o u r c e on-resistance (normalized) ds(on) 1.6 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j ? fig. 18 on-resistance variation with temperature v = -4.5v i = -5a gs d v = -10v i = -10a gs d
dmg6601lvt document number: ds35405 rev. 4 - 2 7 of 9 www.diodes.com august 2013 ? diodes incorporated dmg6601lvt advance informtion 0.04 0.08 0.12 0.16 0 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j ? fig. 19 on-resistance variation with temperature r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) ? v=5v i= a gs d -4. -5 v= -10v i= a gs d -10 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.0 0 -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) fig. 20 gate threshold variation vs. ambient temperature a -v , g ate t h r es h o ld v o lta g e (v) gs(th) -i = 1ma d -i = 250a d 0 2 4 6 8 10 0 0.3 0.6 0.9 1.2 1.5 -v , source-drain voltage (v) fig. 21 diode forward voltage vs. current sd -i , s o u r c e c u r r en t (a) s t= 25c a ? t= -55c a ? t= 85c a ? t= 125c a ? t= 150c a ? 0 5 10 15 20 25 30 1,000 100 10 c , j u n c t i o n c a p a c i t a n c e (p f ) t -v , drain-source voltage (v) fig. 22 typical junction capacitance ds c oss c rss f = 1mhz c iss 02 468101214 q , total gate charge (nc) fig. 23 gate-charge characteristics g 0 2 4 6 8 10 -v , g a t e-s o u r c e v o l t a g e (v) gs v = -15v i= -2.3a ds d
dmg6601lvt document number: ds35405 rev. 4 - 2 8 of 9 www.diodes.com august 2013 ? diodes incorporated dmg6601lvt advance informtion package outline dimensions suggested pad layout 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, pulse duration times (sec) fig. 24 transient thermal resistance r (t) = r(t) * r r = 143c/w duty cycle, d = t1/ t2 ?? ? ja ja ja 0.001 0.01 0.1 r(t), t r ansien t t h e r mal r esis t an c e 1 d = 0.7 d = 0.9 d = 0.5 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 single pulse tsot26 dim min max typ a ?? 1.00 ? a1 0.01 0.10 ? a2 0.84 0.90 ? d ? ? 2.90 e ? ? 2.80 e1 ? ? 1.60 b 0.30 0.45 ? c 0.12 0.20 ? e ? ? 0.95 e1 ? ? 1.90 l 0.30 0.50 l2 ? ? 0.25 0 8 4 1 4 12 ? all dimensions in mm dimensions value (in mm) c 0.950 x 0.700 y 1.000 y1 3.199 c a 1 l e1 e a2 d e1 e 6x b ? ?? l2 a y1 c c x (6x) y (6x)
dmg6601lvt document number: ds35405 rev. 4 - 2 9 of 9 www.diodes.com august 2013 ? diodes incorporated dmg6601lvt advance informtion important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability ari sing out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability w hatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2012, diodes incorporated www.diodes.com
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